3% TMB + SiH4

Trimethylborane (TMB) mixed with silane (SiH4) at a ratio of 3% TMB + SiH4 is a common gas mixture used in the semiconductor epitaxial crystal growth process. This gas mixture is used in the deposition of semiconductor layers, typically during the epitaxial growth of III-V semiconductors such as gallium arsenide (GaAs) or indium phosphide (InP).

The TMB and SiH4 gases are typically introduced into a reactor where they are mixed and then reacted under high temperature and low pressure conditions. The resulting mixture is a source of boron and silicon atoms, which are then deposited onto a substrate to form a thin film of epitaxial crystal.

The use of TMB and SiH4 in epitaxial growth has several advantages. First, the gases are highly reactive and can react quickly to deposit the desired film. Second, the ratio of TMB to SiH4 can be carefully controlled to achieve desired stoichiometry in the resulting film. This allows for precise tailoring of film properties such as composition, thickness, and crystallinity.

In addition to its use in epitaxial growth, the TMB and SiH4 gas mixture may also find applications in other areas of semiconductor processing. For example, it may be used in the doping of semiconductors, where dopant atoms are introduced into the crystal to modify its electrical properties. The TMB and SiH4 gas mixture may also be used in etching processes to remove specific layers or patterns from a semiconductor substrate.

Overall, the combination of TMB and SiH4 at a ratio of 3% TMB + SiH4 is a versatile gas mixture that finds widespread use in the semiconductor industry for epitaxial crystal growth and other processing steps essential for the production of high-quality semiconductors.